note: 1. *1 50hz sine wave 1 c y cle ( non-re p etitive p eak current ) note: 1. measurin g methods are based on japanese industrial standard jis c 7031 measurin g methods for diodes. 2. this p roduct is sensitive to electric shock ( static electricit y , etc. ) . due attention must be p aid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit embossed t yp e ( thermo-com p ression sealin g) : 3 000 p cs / reel unit non-repetitive peak forward surge current ifsm 60 a c junction temperature tj 125 c forward current (average) *1 if av 3.0 reverse current symbol conditions forward voltage ir vr = 40 v a DB24404 silicon epitaxial planar type for rectification marking symbol : a8 absolute maximum ratings ta = 25 c parameter symbol rating tentative DB24404 total pages page semiconductor company, panasonic corporation 2010.4.23 2010.7.27 prepared revised 0.53 min typ max reverse recovery time *1 trr terminal capacitance ct vr = 10 v, f = 1 mhz if = ir = 100 ma irr = 10 ma, rl = 100 a pf ns electrical characteristics ta = 25 c3 c parameter if = 3.0 a -40 to +125 pin name 1. v unit v bias insertion unit (n-50bu) input pulse output pulse pulse generator (pg-10n) r s = 50 wave form analyzer (sas-8130) r i = 50 i rr = 10 ma i f = 100 ma i r = 100 ma r l = 100
tminip2-f2-b unit: mm 2 . 4 0 0 . 1 0 1 . 7 5 0 . 1 0 0 . 1 5 0 . 0 5 2 1 4 . 7 0 0 . 1 0 3 . 8 0 0 . 1 0 0 . 8 5 0 . 0 5 0 t o 0 . 0 3 0 . 4 5 0 . 1 0 5 5 0 t o 0 . 4 0
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